RF Power Amplifier Design
The design of power amplifiers for wireless systems for both mobile and fixed applications requires specialized design techniques.
Power amplifiers are crucially important in determining a communications system cost, efficiency, size, and weight. Designing high power / high efficiency amplifiers that satisfy the system requirements (bandwidth, linearity, spectral mask, etc.) is challenging. It involves difficult trade-offs, proper understanding of the theory, and careful attention to details. Additionally, designing, building, and testing power amplifiers usually pushes test equipment and lab components to their limits and frequently results in damage to the circuit or lab equipment. This course will examine the different aspects of this challenge with emphasis on hand-on exercises and practical tips to build power amplifiers successfully. Oct 24-Oct 26, 2018: San Jose, CA: Presented by: Ali Darwish
This course covers the fundamental principles of RF power amplifier design in the shortest possible time.
This course introduces attendees to the GaN transistor, its properties, various structures, discrete devices and MMIC sources, including the latest GaN power amplifier (PA) design techniques. The properties of GaN will be presented showing the advantage of these devices over GaAs and Si. GaN HEMT transistors will be shown delineating the various geometries, semiconductor processes and structures with associated breakdown voltages, power capability, gain, efficiency, and frequency performance. Guidelines for reliable operation will be presented considering device junction temperature including thermal management techniques. Available GaN HEMT devices from various companies including discrete as well as MMIC elements will be presented. MMIC matching and biasing elements will be shown. The nonlinear models of GaN HEMT devices necessary for the CAD of PAs will be presented. Design considerations for both constant amplitude envelope signals (GSM) as well as the non-constant amplitude envelope signals (Edge, CDMA, WCDMA, WIMAX, LTE) will be presented. Step-by-step design procedures will be shown for various GaN PA examples including different classes of operation as well as the popular Doherty PA. The class offers approximately one day's worth of material, but is typically offered in five 90-minute sessions via web-classroom.
Until recently, power amplifiers have been considered the exclusive province of GaAs, GaN, Si LDMOS and other processes. Recently, there has been renewed interest in the use of CMOS for power amplifiers targeted at the mobile market. Aside from the potential to integrate the PA with the transceiver chip or front-end switch, the main driving factors have been cost and access to a standard foundry process. Although CMOS processes offer significant cost benefits, MOS transistors do have performance limitations when compared to other processes being used for PA design. These limitations require design changes to enable CMOS to be used from PA design. As a result, although there are many similarities to PA design in other processes there are additional aspects that are unfamiliar to PA designers. Therefore CMOS PA design requires a combination of the skills of a PA designer with those of an RFIC design engineer.
This course takes a "system-level" approach to the linearization and behavioural modeling of RF Power Amplifiers. Special emphasis is given to a detailed treatment of PA modeling, both as a means of allowing more meaningful system level simulations, and also as a necessary starting point to the development of advanced predistortion algorithms for PA linearization.
This five-day course provides participants with an overview of the types and characteristics of receivers, large signal power amplifiers, oscillators, and mixers. Approximately 2 days are devoted to the power amplifier discussion. For each of the major topic areas, participants learn the underlying theory of operation, design techniques, operational and performance parameters. Design tradeoffs, linearization, and efficiency enhancement techniques of nonlinear circuits are presented.
This five-day course provides participants with an in-depth examination of advanced RF and microwave design techniques. Approximately 1.5 days are dedicated to the power amplifier discussion. Antennas and filters are covered briefly, followed by a detailed discussion of figures of merit. Mixers and oscillator designs are also evaluated. Considerable attention is devoted to defining, classifying, and improving the efficiency and linearity of power amplifiers. Numerous design examples are provided for participant exploration.