RF/MW Integrated Circuit (RFIC/MMIC) Design
Engineers designing integrated circuits will benefit from these courses on RF CMOS and available processes for custom integration.
| 181 | Monolithic Microwave Integrated Circuit (MMIC) Design The successful design of monolithic microwave integrated circuits (MMICs) is the fruit of a disciplined design approach. This three-day course covers, in detail, the theory, and practical strategies required to achieve first-pass design success. Specifically, the course covers the monolithic implementation of microwave circuits on GaAs substrates including instruction on processing, masks, simulation, layout, design rule checking, packaging, and testing. Numerous design examples are provided with emphasis on increasing yield, and reliability. |
| 194 | Silicon Germanium (SiGe) Design for High-Speed Circuits The Bicmos content in most wireless communication devices is high; this is because customers pay for performance and not for a particular process flavor. Bicmos offers higher performance at a lower cost than advanced CMOS processes.Analog circuit designers find it easier to design in Bicmos, having more tools at their disposal. SiGe Bicmos allows microwave design in areas that were once strictly the domain of other compound semiconductors like GaAs. This course will review the fundamentals of device physics, modelling, circuit design and layout for BiCMOS integrated circuits. It will cover design exercises in the essential building blocks for wireless, high speed logic, A/D and D/A conveters, PLL/DLL and ATE. Designs will be done using a public domain SPICE circuit simulator. The course will describe the basic circuit scaling for optimum speed-power performance in relation to layout, loading and substrate effects. |
| 183 | Semiconductor Device Physics for RF Design This course provides microwave circuit designers with an in-depth look at their “toolkit” of semiconductor devices. Starting with a brief look at quantum mechanics, the course develops a picture of how electrons behave in semiconductor materials. This is applied to functional descriptions of the basic semiconductor devices: the P-N junction, the bipolar transistor and the FET. Further material describes how properties of different semiconductor materials and the ability to create certain material structures leads to the large variety of modern devices, each with its own characteristics, advantages and disadvantages. A final section describes principals of semiconductor fabrication and how limitations in materials and fabrication lead to limitations in performance and repeatability of microwave devices. |
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RF/Wireless Design: Circuit Level
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