Outline
Part Two: Daily Session 4,5,6 – approximately 2.5 hours each day
Active Devices
• De-embedding, Characterization, modeling. • GaAs MESFET, pHEMT, HBT, SiGe, InP and GaN HEMT • Device parameters: ft, fmax, gm, RON, parasitics • Equivalent circuit—physical basis • Intrinsic equivalent circuit • Illustrative example: equivalent circuit extraction • Thermal resistance and lifetime estimation • Design example: choosing FET gate-pitch and bias for 10+ years lifetime
mm-Wave Amplifiers
• Biasing network selection
Single stage design: lumped vs. distributed matching
• Design example: 30 GHz 4W GaN feedback amplifier • Multi-stage design